DocumentCode
1470864
Title
W-band GaAs camel-cathode Gunn devices produced by MBE
Author
Beall, R.B. ; Grecian, P.J. ; Jones, Simon ; Smith, Graeme
Author_Institution
Philips Res. Labs., Redhill, UK
Volume
25
Issue
13
fYear
1989
fDate
6/22/1989 12:00:00 AM
Firstpage
871
Lastpage
873
Abstract
The DC and microwave performance of a novel second-harmonic W-band GaAs Gunn device incorporating a camel barrier are reported. Comparison with conventional Gunn devices shows significant improvement in power output and DC to RF conversion efficiency for the new structure. The frequency at which the maximum power is produced is lower for the camel cathode Gunn device, an observation attributed to a reduction in the length of the acceleration zone.
Keywords
Gunn diodes; III-V semiconductors; gallium arsenide; microwave generation; molecular beam epitaxial growth; DC to RF conversion efficiency; EHF; GaAs; MBE; MM-waves; W-band; acceleration zone; camel barrier; camel-cathode Gunn devices; maximum power frequency; microwave performance; power output; second-harmonic; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890587
Filename
91814
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