• DocumentCode
    1471455
  • Title

    Damage-free reactive ion etching of GaAs FET gate recess

  • Author

    Hilton, K.P. ; Woodward, J. ; Dawsey, J.R. ; Ball, G. ; Gill, S.S.

  • Author_Institution
    R. Signals & Radar Estab., Malvern, UK
  • Volume
    25
  • Issue
    24
  • fYear
    1989
  • Firstpage
    1617
  • Lastpage
    1618
  • Abstract
    A GaAs reactive ion etching process is described which has good uniformity and causes no significant electrical damage to the underlying substrate. The process is shown to be suitable for forming the gate recess of a GaAs MESFET. FETs fabricated using the process exhibit DC and RF performance similar to equivalent wet etched devices.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor technology; sputter etching; DC performance; GaAs; MESFET; RF performance; electrical damage; gate recess; reactive ion etching process; uniformity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891083
  • Filename
    91822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1471455