Title :
Polysilicon TFT technology for active matrix OLED displays
Author :
Stewart, Mark ; Howell, Robert S. ; Pires, Leo ; Hatalis, Miltiadis K.
Author_Institution :
Lucent Technols., Allentown, PA, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness. This work identifies and addresses several process integration issues unique to this type of display which are important in achieving bright and uniform displays. Rapid thermal processing has been incorporated to achieve uniform polysilicon microstructure, along with silicides to reduce parasitic source and drain series resistance. Using these processes, TFT drain current nonuniformity has been reduced below 5% for 90% of the devices. This work also introduces transition metals to produce low resistance contacts to ITO and to eliminate hillock formation in the aluminum metallization. These processes, along with spin on glasses for planarization, have been used to produce functional active matrix arrays for OLED displays. The final array pixel performance is also presented
Keywords :
LED displays; brightness; elemental semiconductors; flat panel displays; passivation; rapid thermal annealing; semiconductor device metallisation; silicon; surface treatment; thin film transistors; Al; ITO low resistance contacts; NiSi; Si; active matrix OLED displays; aluminum metallization; array pixel performance; design strategy; drain current nonuniformity; functional active matrix arrays; hillock formation elimination; nickel silicides; passivation; planarization; polysilicon TFT technology; process integration issues; rapid thermal processing; reduced parasitic resistance; silicon island preparation; spin on glass; uniform brightness displays; uniform polysilicon microstructure; Active matrix organic light emitting diodes; Active matrix technology; Brightness; Flat panel displays; Microstructure; Organic light emitting diodes; Rapid thermal processing; Silicides; Thermal resistance; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on