• DocumentCode
    1471514
  • Title

    Abrupt p+ layers in GaAs by 200 degrees C mercury implantation

  • Author

    Gardner, S. ; Sealy, B.J. ; Gillin, W.P.

  • Volume
    25
  • Issue
    24
  • fYear
    1989
  • Firstpage
    1618
  • Lastpage
    1620
  • Abstract
    Demonstrates for the first time the formation of abrupt and shallow p-type layers in GaAs by implanting mercury and the use of rapid thermal annealing (RTA). The authors have observed that the time-dependence of electrical activation characteristics of the Hg-implanted samples is similar to other p-type species. Furthermore, abrupt electrical profiles with hole concentrations of the order of 9*1018 cm-3 have been achieved after annealing at 900 degrees C for 3 s.
  • Keywords
    III-V semiconductors; annealing; carrier density; gallium arsenide; ion implantation; 3 s; 900 degC; GaAs:Hg; abrupt electrical profiles; abrupt p + layers; electrical activation characteristics; hole concentrations; rapid thermal annealing; shallow p-type layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891084
  • Filename
    91823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1471514