Abrupt p+ layers in GaAs by 200 degrees C mercury implantation

Demonstrates for the first time the formation of abrupt and shallow p-type layers in GaAs by implanting mercury and the use of rapid thermal annealing (RTA). The authors have observed that the time-dependence of electrical activation characteristics of the Hg-implanted samples is similar to other p-type species. Furthermore, abrupt electrical profiles with hole concentrations of the order of 9*10¹⁸ cm^-3 have been achieved after annealing at 900 degrees C for 3 s.