Charge transfer in a multi-implant pinned-buried photodetector

Author

Janval, R.K. ; Misra, Durga ; Lowrance, John L.

Author_Institution

Inst. of Technol., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

48

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

858

Lastpage

862

Abstract

This work presents a charge transfer model for a multi-implant (graded) pinned-buried photodetector for high frame rate imaging applications. The model takes into account the initial charge of each implanted region which is divided into a large number of small areas and the maximum effective transit length of the far and near electrons by taking into account the fringing field effect due to graded implants under uniform illumination condition. The model predicts 1.5 μs for a single-implant and 500 ns for a three-implant photodetector for collection of 90% of the initial charge. The computed values agree well with the experimental results for a three-implant 70 μm×45 μm photodetector measured at a rate of 10⁶ frames/s with uniform illumination by 100 ns LED pulses

Keywords

CCD image sensors; ion implantation; photodetectors; semiconductor device models; 45 micron; 70 micron; charge readout time; charge transfer model; far electrons; fringing field effect; graded implants; high frame rate imaging; maximum effective transit length; multi-implant pinned-buried photodetector; near electrons; single-implant photodetector; thermal diffusion effect; three-implant photodetector; uniform illumination condition; Charge transfer; Electrons; Image sensors; Implants; Lighting; Optical imaging; Photodetectors; Pixel; Pulse measurements; Semiconductor process modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.918231

Filename

918231