• DocumentCode
    1471571
  • Title

    Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, ^{16} O and p Radiation

  • Author

    Quinteros, C.P. ; Salomone, L. Sambuco ; Redin, E. ; Rafí, J.M. ; Zabala, M. ; Faigón, A. ; Palumbo, F. ; Campabadal, F.

  • Author_Institution
    Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) and CNEA, San Martín (1650), Argentina
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    767
  • Lastpage
    772
  • Abstract
    MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons ^{60}{\\hbox {Co}} , 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Capacitors; Hafnium oxide; Hysteresis; Radiation effects; High-k gate dielectrics; MOS devices; radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2187217
  • Filename
    6170909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1471571