• DocumentCode
    1471639
  • Title

    PIN avalanche photodiodes model for circuit simulation

  • Author

    Chen, Weiyou ; Liu, Shiyong

  • Author_Institution
    Dept. of Electron. Eng., Jilin Univ., Changchun, China
  • Volume
    32
  • Issue
    12
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2105
  • Lastpage
    2111
  • Abstract
    A circuit model of PIN avalanche photodiodes (APD´s) based on the carrier rate equations for circuit simulation is presented. This model is for dc, ac, and transient analysis. As an example, an In0.53 Ga0.47As-InP PIN APD is simulated
  • Keywords
    III-V semiconductors; avalanche photodiodes; carrier mobility; circuit analysis computing; digital simulation; gallium arsenide; indium compounds; semiconductor device models; transient analysis; In0.53Ga0.47As-InP; In0.53Ga0.47As-InP PIN APD; PIN avalanche photodiodes; PIN avalanche photodiodes model; ac analysis; carrier rate equations; circuit model; circuit simulation; dc analysis; transient analysis; Avalanche photodiodes; Charge carrier processes; Circuit simulation; Equations; Impact ionization; Impurities; Lighting; Optoelectronic devices; PIN photodiodes; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.544756
  • Filename
    544756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1471639