Title :
PIN avalanche photodiodes model for circuit simulation
Author :
Chen, Weiyou ; Liu, Shiyong
Author_Institution :
Dept. of Electron. Eng., Jilin Univ., Changchun, China
fDate :
12/1/1996 12:00:00 AM
Abstract :
A circuit model of PIN avalanche photodiodes (APD´s) based on the carrier rate equations for circuit simulation is presented. This model is for dc, ac, and transient analysis. As an example, an In0.53 Ga0.47As-InP PIN APD is simulated
Keywords :
III-V semiconductors; avalanche photodiodes; carrier mobility; circuit analysis computing; digital simulation; gallium arsenide; indium compounds; semiconductor device models; transient analysis; In0.53Ga0.47As-InP; In0.53Ga0.47As-InP PIN APD; PIN avalanche photodiodes; PIN avalanche photodiodes model; ac analysis; carrier rate equations; circuit model; circuit simulation; dc analysis; transient analysis; Avalanche photodiodes; Charge carrier processes; Circuit simulation; Equations; Impact ionization; Impurities; Lighting; Optoelectronic devices; PIN photodiodes; Transient analysis;
Journal_Title :
Quantum Electronics, IEEE Journal of
