Title :
Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion
Author :
Park, Namkyu ; O, K.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
Dependence of 1/f noise on the body-to-source junction bias voltages (VBS) between -2.5 and 0.5 V for 0.25-μm NMOS transistors is reported. In subthreshold, 1/f noise is reduced by about one order of magnitude, when the body-to-source junction is forward biased by 0.5 V (VBS) compared to that for VBS=0 V, which is due to increased depletion layer capacitance as well as possibly due to an increased average distance between oxide traps and carriers caused by the forward bias. On the contrary, in strong inversion, 1/f noise remains almost constant for the entire VBS range
Keywords :
1/f noise; MOSFET; semiconductor device measurement; semiconductor device noise; -2.5 to 0.5 V; 1/f noise; NMOS transistors; body bias dependence; body-to-source junction bias voltages; depletion layer capacitance; forward biasing; oxide trap and carrier distance; strong inversion; subthreshold; Analog circuits; CMOS technology; Circuit noise; Fluctuations; Low-frequency noise; MOSFETs; Noise measurement; Noise reduction; Solid modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
