Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion

Author

Park, Namkyu ; O, K.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

48

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

999

Lastpage

1001

Abstract

Dependence of 1/f noise on the body-to-source junction bias voltages (V_BS) between -2.5 and 0.5 V for 0.25-μm NMOS transistors is reported. In subthreshold, 1/f noise is reduced by about one order of magnitude, when the body-to-source junction is forward biased by 0.5 V (V_BS) compared to that for V_BS=0 V, which is due to increased depletion layer capacitance as well as possibly due to an increased average distance between oxide traps and carriers caused by the forward bias. On the contrary, in strong inversion, 1/f noise remains almost constant for the entire V_BS range

Keywords

1/f noise; MOSFET; semiconductor device measurement; semiconductor device noise; -2.5 to 0.5 V; 1/f noise; NMOS transistors; body bias dependence; body-to-source junction bias voltages; depletion layer capacitance; forward biasing; oxide trap and carrier distance; strong inversion; subthreshold; Analog circuits; CMOS technology; Circuit noise; Fluctuations; Low-frequency noise; MOSFETs; Noise measurement; Noise reduction; Solid modeling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.918249

Filename

918249