Title :
Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment
Author :
Seah, Siau Hing Lionel ; Yeo, Kiat Seng ; Jian Guo Fia ; Do, Manh Anh
Author_Institution :
Sch. of Electr. & Electronic. Eng., Nanyang Technol. Inst., Singapore
fDate :
5/1/2001 12:00:00 AM
Abstract :
The effective channel length Leff and total external series resistance RTOText of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. The accuracy of the device threshold voltage used in the Leff and RTOText extraction routine is discussed. The proposed models have been verified for temperature ranging from 223 K to 398 K and source-to-body voltage VSB>0 V conditions
Keywords :
BIMOS integrated circuits; MOSFET; electric resistance; semiconductor device models; 223 to 398 K; Bi-MOS hybrid-mode environment; bias dependence; device threshold voltage; effective channel length; model; scaled LDD pMOSFETs; source-to-body voltage conditions; temperature dependence; total external series resistance; Data mining; Energy states; Hybrid junctions; Immune system; Implants; MOSFETs; Temperature distribution; Thickness measurement; Threshold voltage; Vibration measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
