Title :
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
Author :
Guan, Hao ; Cho, Byung Jin ; Li, M.-F. ; Xu, Zhen ; He, Y.D. ; Dong, Zhong
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
5/1/2001 12:00:00 AM
Abstract :
The quasi-breakdown (QB) mechanism of thin gate oxide was investigated through observation of defects generation during stress. It has been found that the amount of interface traps reaches the same critical value at the onset point of QB regardless of stress conditions, implying that QB in thin oxide is triggered by a critical amount of interface traps
Keywords :
MOS capacitors; MOSFET; dielectric thin films; electric breakdown; interface states; 37 angstrom; 45 angstrom; CMOS technology; MOS capacitors; MOSFET; Si-SiO2; critical value; defects generation; interface traps; interface-controlled mechanism; quasi-breakdown; stress conditions; ultrathin gate oxide; CMOS technology; Carbon capture and storage; Current density; Electron traps; Helium; Leakage current; MOSFET circuits; Semiconductor device noise; Stress; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
