DocumentCode
1471704
Title
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
Author
Guan, Hao ; Cho, Byung Jin ; Li, M.-F. ; Xu, Zhen ; He, Y.D. ; Dong, Zhong
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume
48
Issue
5
fYear
2001
fDate
5/1/2001 12:00:00 AM
Firstpage
1010
Lastpage
1013
Abstract
The quasi-breakdown (QB) mechanism of thin gate oxide was investigated through observation of defects generation during stress. It has been found that the amount of interface traps reaches the same critical value at the onset point of QB regardless of stress conditions, implying that QB in thin oxide is triggered by a critical amount of interface traps
Keywords
MOS capacitors; MOSFET; dielectric thin films; electric breakdown; interface states; 37 angstrom; 45 angstrom; CMOS technology; MOS capacitors; MOSFET; Si-SiO2; critical value; defects generation; interface traps; interface-controlled mechanism; quasi-breakdown; stress conditions; ultrathin gate oxide; CMOS technology; Carbon capture and storage; Current density; Electron traps; Helium; Leakage current; MOSFET circuits; Semiconductor device noise; Stress; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.918254
Filename
918254
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