• DocumentCode
    1471722
  • Title

    The nonvolatile cell hidden in standard CMOS logic technologies

  • Author

    Lovett, Simon J.

  • Author_Institution
    Cypress Semicond., San Jose, CA, USA
  • Volume
    48
  • Issue
    5
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    1017
  • Lastpage
    1018
  • Abstract
    An electrically programmable cell is described which is latently available in virtually all modern CMOS logic processes. The cell consists of an n-ch and a p-ch device with their gates coupled together to form the floating gate. The element may be used to adjust circuit function, timing, zero adjust, etc
  • Keywords
    CMOS logic circuits; programmable circuits; timing; 0.25 mum; 3.3 V; CMOS logic technologies; circuit function; coupled gates; electrically programmable cell; floating gate; hidden nonvolatile cell; n-ch device; one time programmable nonvolatile cell; p-ch device; timing; zero adjust; Breakdown voltage; CMOS logic circuits; CMOS process; CMOS technology; Costs; EPROM; Electric breakdown; Logic devices; Substrates; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.918257
  • Filename
    918257