Title :
A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling
Author :
Benson, James ; D´Halleweyn, Nele V. ; Redman-White, William ; Easson, Craig A. ; Uren, Michael J. ; Faynot, Olivier ; Pelloie, Jean-Luc
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
5/1/2001 12:00:00 AM
Abstract :
Compact MOS models based on surface potential are now firmly established, but for practical applications there is no reliable link between measured values of threshold voltage and the flat-band voltage on which such models are based. This brief presents an analytical relationship which may be implemented in compact models to provide a reliable and accurate threshold parameter input. Results are compared with a conventional threshold voltage model for several SOI CMOS technologies. This technique has been developed for use with body-tied SOI transistors, and hence it can also be applied to bulk devices
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; surface potential; MOSFET compact modeling; SOI CMOS technologies; analytical relationship; body-tied SOI transistors; compact MOS models; physically based relation; surface potential flat band voltage; threshold voltage; CMOS technology; Computer science; Error correction; MOSFET circuits; Microelectronics; Semiconductor device modeling; Threshold voltage; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
