A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling

Author

Benson, James ; D´Halleweyn, Nele V. ; Redman-White, William ; Easson, Craig A. ; Uren, Michael J. ; Faynot, Olivier ; Pelloie, Jean-Luc

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

Volume

48

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

1019

Lastpage

1021

Abstract

Compact MOS models based on surface potential are now firmly established, but for practical applications there is no reliable link between measured values of threshold voltage and the flat-band voltage on which such models are based. This brief presents an analytical relationship which may be implemented in compact models to provide a reliable and accurate threshold parameter input. Results are compared with a conventional threshold voltage model for several SOI CMOS technologies. This technique has been developed for use with body-tied SOI transistors, and hence it can also be applied to bulk devices

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; surface potential; MOSFET compact modeling; SOI CMOS technologies; analytical relationship; body-tied SOI transistors; compact MOS models; physically based relation; surface potential flat band voltage; threshold voltage; CMOS technology; Computer science; Error correction; MOSFET circuits; Microelectronics; Semiconductor device modeling; Threshold voltage; Voltage measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.918258

Filename

918258