• DocumentCode
    1471740
  • Title

    Experimental determination of carrier-induced differential loss in 2-section GaInAsP/InP laser-waveguide

  • Author

    Brosson, P. ; Labourie, C. ; le Gouezigou, L. ; Lievin, J.L. ; Jacquet, Joel ; Leblond, Frederic ; Olivier, Augustin ; Leclerc, D.

  • Author_Institution
    Lab. de Marcoussis, France
  • Volume
    25
  • Issue
    24
  • fYear
    1989
  • Firstpage
    1623
  • Lastpage
    1624
  • Abstract
    Measurements of threshold current density and external efficiency on broad-area laser-waveguide structure have led to the determination of the optical loss and differential loss d alpha /dN approximately=1.1-2.3 *10-17 cm2 at lambda =1.53 mu m in a lambda g=1.30 mu m GaInAsP layer. This measurement will be useful for the design of tunable lasers.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical loss measurement; optical waveguides; semiconductor junction lasers; 1.53 micron; GaInAsP-InP; broad-area laser-waveguide structure; carrier-induced differential loss; differential loss; external efficiency; optical loss; threshold current density; tunable lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891087
  • Filename
    91826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1471740