Title :
Circuit model for multilongitudinal-mode semiconductor lasers
Author :
Chen, Weiyou ; Liu, Shiyong
Author_Institution :
Dept. of Electron. Eng., Jilin Univ., Changchun, China
fDate :
12/1/1996 12:00:00 AM
Abstract :
Under the assumption that the emission spectra of a semiconductor laser diode (LD) as a function of wavelength is Gaussian, a simple circuit model for a multilongitudinal-mode (MLM) LD is developed based upon MLM rate equations. This model is very suitable for the computer-aided analysis of an optoelectronic integrated circuit (OEIC). Using this model, the dc and ac characteristics of a trenched buried heterostructure LD are studied. The simulated results agree with the reports. The dependence of threshold and emission spectra on the cavity length is simulated
Keywords :
circuit analysis computing; equivalent circuits; laser modes; laser theory; semiconductor device models; semiconductor lasers; Gaussian; MLM rate equations; ac characteristics; cavity length; circuit model; computer-aided analysis; dc characteristics; emission spectra; multilongitudinal-mode semiconductor lasers; optoelectronic integrated circuit; semiconductor laser diode; simple circuit model; simulated results; simulation; threshold dependence; trenched buried heterostructure LD; Charge carrier density; Circuits; Equations; Laser modes; Optical refraction; Optical variables control; Refractive index; Semiconductor lasers; Spontaneous emission; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
