Circuit model for multilongitudinal-mode semiconductor lasers

Author

Chen, Weiyou ; Liu, Shiyong

Author_Institution

Dept. of Electron. Eng., Jilin Univ., Changchun, China

Volume

32

Issue

12

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2128

Lastpage

2132

Abstract

Under the assumption that the emission spectra of a semiconductor laser diode (LD) as a function of wavelength is Gaussian, a simple circuit model for a multilongitudinal-mode (MLM) LD is developed based upon MLM rate equations. This model is very suitable for the computer-aided analysis of an optoelectronic integrated circuit (OEIC). Using this model, the dc and ac characteristics of a trenched buried heterostructure LD are studied. The simulated results agree with the reports. The dependence of threshold and emission spectra on the cavity length is simulated

Keywords

circuit analysis computing; equivalent circuits; laser modes; laser theory; semiconductor device models; semiconductor lasers; Gaussian; MLM rate equations; ac characteristics; cavity length; circuit model; computer-aided analysis; dc characteristics; emission spectra; multilongitudinal-mode semiconductor lasers; optoelectronic integrated circuit; semiconductor laser diode; simple circuit model; simulated results; simulation; threshold dependence; trenched buried heterostructure LD; Charge carrier density; Circuits; Equations; Laser modes; Optical refraction; Optical variables control; Refractive index; Semiconductor lasers; Spontaneous emission; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.544759

Filename

544759