DocumentCode :
1471982
Title :
Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a 
Photonic Quasi-Crystal Overgrowth
Author :
Huang, H.W. ; Huang, J.K. ; Lee, K.Y. ; Lin, C.F. ; Kuo, H.C.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
31
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
573
Lastpage :
575
Abstract :
GaN-based LEDs with a SiO2 oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 μm) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO2 oxide PQC structure on an n-GaN layer.
Keywords :
III-V semiconductors; gallium compounds; integrated optoelectronics; light emitting diodes; nanolithography; photonic crystals; silicon compounds; soft lithography; wide band gap semiconductors; GaN-SiO2; LED; current 20 mA; driving current; internal-quantum-efficiency; light output power; light-emitting diodes; light-output-power enhancement; n-GaN layer; nanoimprint lithography; photonic quasicrystal overgrowth; transistor-outline-can package; Gallium nitride (GaN); light-emitting diodes (LEDs); photonic quasi-crystal (PQC);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2045218
Filename :
5447626
Link To Document :
