• DocumentCode
    1472019
  • Title

    Pulse-Programming Instabilities of Unipolar-Type NiOx

  • Author

    Kim, Deok-Kee ; Suh, Dong-Seok ; Park, Jucheol

  • Author_Institution
    Samsung Electron. Co., Ltd., Yongin, South Korea
  • Volume
    31
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    600
  • Lastpage
    602
  • Abstract
    Oscillations in the transient current profiles of resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the unstably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.
  • Keywords
    capacitance; circuit feedback; oscillations; random-access storage; switching circuits; feedback circuit; oscillations; parasitic capacitance; pulse-programming instabilities; resistive random access memory cell; threshold switching; unipolar resistive memory switching; $hbox{NiO}_{x}$; pulse programming; resistive random access memory (ReRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2045873
  • Filename
    5447631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472019