Title :
Transport solutions for the SCH quantum-well laser diode: comment
Author_Institution :
Inst. fur Hochfrequenztechnik und Quantenelektronik, Karlsruhe Univ.
fDate :
12/1/1996 12:00:00 AM
Abstract :
A number of errors and inconsistencies seems to occur in the paper by Taylor and Claisse. As a consequence, the main results of the paper appear to be incorrect. A simple argument provides a better understanding of the reduced ambipolar lifetime when assuming a fixed carrier concentration in the quantum well above threshold
Keywords :
carrier density; diffusion; laser theory; quantum well lasers; semiconductor device models; SCH quantum-well laser diode; above threshold quantum well; errors; fixed carrier concentration; reduced ambipolar lifetime; separate confinement heterostructure lasers; Absorption; Charge carrier processes; Clamps; Current density; Diodes; Equations; Frequency; Quantum well lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
