Title :
High-performance 980 nm quantum dot lasers for high-power applications
Author :
Klopf, F. ; Reithmaier, J.P. ; Forchel, A. ; Collot, P. ; Krakowski, M. ; Calligaro, M.
Author_Institution :
Tech. Phys. Univ. Wurzburg, Germany
fDate :
3/15/2001 12:00:00 AM
Abstract :
High-performance quantum dot lasers emitting at 980 nm with output powers of up to 4 W CW from a single facet (AR/HR coating, 100 μm stripe width) have been fabricated. Wall-plug efficiencies >50%, were achieved at room temperature. Owing to an improved carrier confinement output powers as high as 1 W CW can be obtained from the fundamental dot transition even at temperatures as high as 110°C
Keywords :
antireflection coatings; laser beams; laser transitions; molecular beam epitaxial growth; optical fabrication; optical films; quantum dots; quantum well lasers; semiconductor quantum dots; 1 W; 100 mum; 110 C; 298 K; 4 W; 50 percent; 980 nm; antireflective/high reflective coatings; carrier confinement; fabrication; fundamental dot transition; high-performance quantum dot lasers; high-power applications; output powers; quantum dot lasers; room temperature; single facet; stripe width; temperatures; wall-plug efficiencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010228
