• DocumentCode
    1472414
  • Title

    High-power 1.5 mu m all-MOVPE buried heterostructure graded index separate confinement multiple quantum well lasers

  • Author

    Cooper, Diana Marina ; Aylett, Matthew ; Elton, D.J. ; Harlow, M. ; Murrell, D.L.

  • Author_Institution
    British Telecom Res. Labs., Ipswich, UK
  • Volume
    25
  • Issue
    24
  • fYear
    1989
  • Firstpage
    1635
  • Lastpage
    1637
  • Abstract
    A maximum total CW output power of 190 mW has been obtained at 1.55 mu m using a buried heterostructure graded index separate confinement multiple quantum well laser grown entirely by metalorganic vapour-phase epitaxy.
  • Keywords
    semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; 190 mW; buried heterostructure graded index separate confinement multiple quantum well lasers; maximum total CW output power; metalorganic vapour-phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891096
  • Filename
    91835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472414