Title :
16 GHz low-power 1:4 prescalar fabricated in 1.0 μm BiFET technology
Author :
Runge, K. ; Zamoardi, P.J. ; Pierson, R.L. ; Penny, J.
Author_Institution :
Rockwell Sci. Center, Thousand Oaks, CA, USA
fDate :
3/15/2001 12:00:00 AM
Abstract :
An experimental 16 GHz low-power 1:4 prescalar in 1 μm BiFET technology is reported. The prescalar was designed in both heterojunction bipolar (HBT) technology, and BiFET technology. The BiFET version utilised MESFET current sources, thereby reducing the supply voltage from -6.8 to 4.65 V (-6 to -4.15 V at lower frequencies), which results in power savings of approximately 30%
Keywords :
III-V semiconductors; digital integrated circuits; gallium arsenide; low-power electronics; monolithic integrated circuits; prescalers; -4.15 V; -4.65 V; 1.0 micron; 16 GHz; 1:4 prescalar; BiFET technology; GaAs; MESFET current sources; low-power electronics; power savings; supply voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010231
