DocumentCode :
1472557
Title :
Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma
Author :
Chatterjee, S. ; Samanta, S.K. ; Banerjee, H.D. ; Maiti, C.K.
Author_Institution :
Dept.of Electron. & ECE, IIT Kharagpur, India
Volume :
37
Issue :
6
fYear :
2001
fDate :
3/15/2001 12:00:00 AM
Firstpage :
390
Lastpage :
392
Abstract :
High dielectric constant (high-k) ZrO2 films have been deposited on strained Si0.81Ge0.09 epitaxial layers using zirconium tetratert butoxide [Zr(OC(CH3)3 )4] by microwave plasma enhanced chemical vapour deposition technique at a low temperature. Deposited ZrO2 films show good electrical properties and are suitable for microelectronic applications
Keywords :
Ge-Si alloys; MOS integrated circuits; ULSI; dielectric thin films; low-power electronics; permittivity; plasma CVD; semiconductor materials; zirconium compounds; GSI; MOS; SiGe-ZrO2; dielectric constant; electrical properties; low-power electronics; microelectronic applications; microwave plasma; plasma enhanced chemical vapour deposition;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010253
Filename :
918368
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1472557
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