• DocumentCode
    1472557
  • Title

    Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma

  • Author

    Chatterjee, S. ; Samanta, S.K. ; Banerjee, H.D. ; Maiti, C.K.

  • Author_Institution
    Dept.of Electron. & ECE, IIT Kharagpur, India
  • Volume
    37
  • Issue
    6
  • fYear
    2001
  • fDate
    3/15/2001 12:00:00 AM
  • Firstpage
    390
  • Lastpage
    392
  • Abstract
    High dielectric constant (high-k) ZrO2 films have been deposited on strained Si0.81Ge0.09 epitaxial layers using zirconium tetratert butoxide [Zr(OC(CH3)3 )4] by microwave plasma enhanced chemical vapour deposition technique at a low temperature. Deposited ZrO2 films show good electrical properties and are suitable for microelectronic applications
  • Keywords
    Ge-Si alloys; MOS integrated circuits; ULSI; dielectric thin films; low-power electronics; permittivity; plasma CVD; semiconductor materials; zirconium compounds; GSI; MOS; SiGe-ZrO2; dielectric constant; electrical properties; low-power electronics; microelectronic applications; microwave plasma; plasma enhanced chemical vapour deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010253
  • Filename
    918368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472557