Title :
Multistep junction termination extension for SiC power devices
Author :
Li, X. ; Tone, K. ; Fursin, L. ; Zhao, J.H. ; Burke, T. ; Alexandrov, P. ; Pan, M. ; Weine, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
3/15/2001 12:00:00 AM
Abstract :
A multistep junction termination extension (MJTE) for SiC power devices, which uses a single-step ion implantation and multiple dry etches, is studied by way of two-dimensional numerical simulations and confirmed by fabricating and measuring a high-voltage implanted 4H-SiC pin diode. It is shown that MJTE is a very effective approach and can be easily implemented in experiment
Keywords :
ion implantation; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; silicon compounds; sputter etching; wide band gap semiconductors; SiC; SiC power devices; breakdown voltage; equipotential lines; high-voltage implanted 4H-SiC pin diode; multiple dry etches; multistep junction termination extension; reverse J-V curves; single-step ion implantation; two-dimensional numerical simulations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010258
