Title :
Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors
Author :
Huang, J.J. ; Caruth, D. ; Feng, M. ; Lambert, D.J.H. ; Shelton, B.S. ; Wong, M.M. ; Chowdhury, U. ; Zhu, T.G. ; Keon, H.K. ; Dupuis, R.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
3/15/2001 12:00:00 AM
Abstract :
Increased collector current and common emitter (CE) current gain at lower temperature in AlGaN/GaN heterojunction bipolar transistors is reported. For the same base current IB=15 μA and biased voltage VCE=50 V, the collector current increases from IC=169 μA (β=11) at 295 K to Ic=411 μA (β=27) at 190 K. This increase in the collector current and CE gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with dislocation centres in the base-emitter junction
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; electron traps; electron-hole recombination; gallium compounds; heterojunction bipolar transistors; semiconductor device measurement; wide band gap semiconductors; 15 muA; 169 to 411 muA; 190 to 295 K; 50 V; AlGaN-GaN; AlGaN/GaN heterojunction bipolar transistors; base recombination current; base-emitter junction; biased voltage; carrier traps; collector current; common emitter current gain; dislocation centres; low temperature; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010263
