DocumentCode
1472771
Title
Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes
Author
Tai, K. ; Wang, K.W. ; Chu, S.N.G. ; Cho, Andrew Y.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
25
Issue
24
fYear
1989
Firstpage
1644
Lastpage
1645
Abstract
The authors report the first successful use of implant isolation by singly charged oxygen to fabricate MBE-grown GaAs-AlGaAs vertical cavity surface-emitting lasers (VCSELs). Almost identical room-temperature pulsed thresholds of 26 mA on 15 mu m diameter devices with 0.25 mu m GaAs active thicknesses were obtained using implant isolation against etched mesa isolation. The planar nature of implant isolation greatly simplifies processing to allow more sophisticated use of VCSELs.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; laser cavity resonators; molecular beam epitaxial growth; optical workshop techniques; semiconductor junction lasers; 0.25 micron; 15 micron; 26 mA; GaAs active thicknesses; GaAs-AlGaAs; MBE-grown; fabrication; implant isolation; semiconductor lasers; singly charged O implant; surface-emitting laser diodes; vertical cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891102
Filename
91841
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