1.5 mu m GaInAsP/InP distributed reflector (DR) laser with high-low reflection grating structure

Author

Aoki, Masaki ; Komori, Kenji ; Miyamoto, Yutaka ; Arai, Shigehisa ; Suematsu, Yasuharu

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

25

Issue

24

fYear

1989

Firstpage

1650

Lastpage

1651

Abstract

A 1.5 mu m-wavelength dynamic-single-mode laser with high-low reflection grating structure aiming at high output and uni-directional output operation has been obtained for the first time using a selective etching process and low-pressure MOVPE regrowth. A front/rear output power ratio exceeding 50 and side-mode suppression ratio (SMSR) greater than 39 dB were obtained at 1.3 times the threshold.

Keywords

III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; etching; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser modes; laser transitions; optical waveguides; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; Braff reflector type; GaInAsP-InP; Semiconductor lasers; distributed feedback type; distributed reflector; dynamic-single-mode laser; high-low reflection grating structure; integrated optics; low-pressure MOVPE regrowth; optical waveguides; selective etching process; uni-directional output operation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19891106

Filename

91845