DocumentCode
1472890
Title
High-speed InP/GaInAs photodiode on sapphire substrate
Author
Schumacher, H. ; Gmitter, T.J. ; Leblanc, H.P. ; Bhat, R. ; Yablonovitch, E. ; Koza, M.A.
Volume
25
Issue
24
fYear
1989
Firstpage
1653
Lastpage
1654
Abstract
Using epitaxial lift-off by selective wet-chemical etching the authors have transferred an InP/GaInAs p-i-n photodiode onto a sapphire substrate. The transferred diode shows an estimated 13.5 GHz bandwidth and 90% internal quantum efficiency. Their technique has promising applications in high-performance optoelectronic circuits for fibre-optic communications systems combining devices from different material systems.
Keywords
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; sapphire; 1.3 micron; 1.55 micron; 13.5 GHz; 90 percent; III-V semiconductor; InP-GaInAs; PIN diode; detector bandwidth; epitaxial lift-off; fibre-optic communications systems; high speed device; internal quantum efficiency; mesa structure; optoelectronic circuits; photodiode; sapphire substrate; selective wet-chemical etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891108
Filename
91847
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