Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

Author

Dong, Shurong ; Jin, Hao ; Miao, Meng ; Wu, Jian ; Liou, Juin J.

Author_Institution

Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China

Volume

33

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

640

Lastpage

642

Abstract

A novel capacitance coupling complementary dual-direction silicon-controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5-μm BCD process. The trigger voltage of CCCDSCR can be adjusted by coupling capacitance to meet different protection requirements. Compared with traditional lateral double-diffusion NMOS, LDSCR, stacked field-oxide device, and stacked low-voltage-triggering SCR devices, the CCCDSCR has appropriate low trigger voltage of 27.3 V, high holding voltage of 24.3 V, and highest figure of merit (FOM) according to our defined FOM.

Keywords

electrostatic discharge; thyristors; LDSCR; and stacked low-voltage-triggering SCR device; capacitance coupling complementary dual-direction silicon-controlled rectifier; dual-direction SCR; figure of merit; high-voltage ESD; high-voltage electrostatic discharge protection; lateral double-diffusion NMOS; stacked field-oxide device; CMOS integrated circuits; Capacitance; Couplings; Electrostatic discharges; Kirk field collapse effect; Thyristors; Voltage measurement; Capacitance coupling; dual-direction silicon-controlled rectifier (SCR); electrostatic discharge (ESD); high-voltage protection;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2188015

Filename

6171825