Title :
CMOS-MEMS 3-bit Digital Capacitors With Tuning Ratios Greater Than 60:1
Author :
Reinke, John ; Fedder, Gary K. ; Mukherjee, Tamal
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fDate :
5/1/2011 12:00:00 AM
Abstract :
3-bit microelectromechanical systems digital capacitors with greater than 60:1 tuning ratios are monolithically integrated with CMOS using a post-CMOS fabrication process. The digital capacitors are composed of many switched capacitors in parallel, which use a combination of vertical (out-of-plane) electrothermal actuation and lateral (in-plane) electrostatic actuation to toggle their capacitance value. Measured results demonstrate quality factors greater than 150 at 1 GHz and electrical self-resonant frequencies beyond 10 GHz. The capacitors can be switched in less than 1 ms with 4 V for electrothermal actuation and 20 V for electrostatic actuation. The effects of repeated actuation are presented to assess the reliability of the digital capacitors.
Keywords :
CMOS digital integrated circuits; Q-factor; UHF integrated circuits; capacitors; electrostatic actuators; microfabrication; switched capacitor networks; CMOS-MEMS digital capacitor reliability; electrical self-resonant frequency; electrothermal actuation; frequency 1 GHz; lateral electrostatic actuation; microelectromechanical systems digital capacitors; post-CMOS fabrication process; quality factors; switched capacitors; voltage 20 V; voltage 4 V; word length 3 bit; Actuators; Capacitance; Capacitors; Electrodes; Metals; Micromechanical devices; Rotors; Actuators; RF MEMS; capacitive microelectromechanical systems (MEMS) switches; integrated systems; microelectromechanical systems (MEMS); reconfigurable circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2011.2114363