DocumentCode :
1473178
Title :
Carrier scattering approach to the origins of dark current in mid and far-infrared (terahertz) quantum-well intersubband photodetectors (QWLPs)
Author :
Etteh, Nkaepe E I ; Harrison, Paul
Author_Institution :
Inst. of Microwaves & Photon., Leeds Univ., UK
Volume :
37
Issue :
5
fYear :
2001
fDate :
5/1/2001 12:00:00 AM
Firstpage :
672
Lastpage :
675
Abstract :
A carrier scattering approach is taken in an analysis of the affect on the dark current of extending the operating wavelength of conventional bound to continuum quantum-well intersubband photodetectors. It is found that both the sequential tunneling and the thermionic emission contributions to the dark current increase as the wavelength of the detector is extended from the mid- to far-infrared. Dark current designs rules are derived
Keywords :
dark conductivity; infrared detectors; optical design techniques; photodetectors; quantum well devices; semiconductor quantum wells; surface scattering; thermionic emission; tunnelling; bound continuum quantum-well intersubband photodetectors; carrier scattering approach; continuum quantum-well intersubband photodetectors; dark current; dark current designs rule; detector; detector wavelength; far-infrared quantum-well intersubband photodetectors; mid-infrared quantum-well intersubband photodetectors; operating wavelength; photodetectors; quantum-well intersubband photodetectors; sequential tunneling; terahertz quantum-well intersubband photodetectors; thermionic emission contributions; wavelength; Dark current; Electromagnetic scattering; Electrons; Microwave photonics; Particle scattering; Phonons; Photodetectors; Quantum wells; Thermionic emission; Tunneling;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.918580
Filename :
918580
Link To Document :
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