Title :
A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology
Author :
Madan, Anuj ; McPartlin, Michael J. ; Masse, Christophe ; Vaillancourt, William ; Cressler, John D.
Author_Institution :
Skyworks Solutions, Inc., Woburn, MA, USA
fDate :
4/1/2012 12:00:00 AM
Abstract :
A 5 GHz CMOS LNA featuring a record 0.95 dB noise-figure is reported. Using an inductively-degenerated cascode topology combined with floating-body transistors and high-Q passives on an SOI substrate, record noise figure and superior linearity performance at 5 GHz are obtained. The low-noise amplifier (LNA) achieves up to 11 dB of gain while consuming 12 mW dc power, and is capable of supporting 802.11a WLAN applications. The impact of SOI body-contact on the LNA RF performance is described and linked to improved intermodulation performance.
Keywords :
CMOS analogue integrated circuits; intermodulation; low noise amplifiers; silicon-on-insulator; wireless LAN; 802.11a WLAN application; SOI CMOS technology; SOI body-contact; floating-body transistor; frequency 5 GHz; inductively-degenerated cascode topology; intermodulation performance; linear cascode floating-body LNA; low-noise amplifier; noise figure 0.95 dB; power 12 mW; size 180 nm; CMOS integrated circuits; Gain; Noise; Noise measurement; Radio frequency; System-on-a-chip; Wireless LAN; Intermodulation distortion; WLAN; linearity; low-noise amplifier (LNA); radio-frequency integrated circuits (RFICs); system-on-chip (SoC) CMOS;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2012.2187882
