Title :
1.1 kV 4H-SiC power UMOSFETs
Author :
Agarwal, A.K. ; Casady, J.B. ; Rowland, L.B. ; Valek, W.F. ; White, M.H. ; Brandt, C.D.
Author_Institution :
Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA
Abstract :
Silicon Carbide (4H-SiC), power UMOSFETs were fabricated and characterized from room temperature to 200/spl deg/C. The devices had a 12-μm thick lightly doped n-type drift layer, and a nominal channel length of 4 μm. When tested under Fluorinert/sup TM/ at room temperature, blocking voltages ranged from 1.0 kV to 1.2 kV. Effective channel mobility ranged from 1.5 cm2/V.s at room temperature with a gate bias of 32 V (3.5 MV/cm) up to 7 cm2/V.s at 100/spl deg/C with an applied gate bias of 26 V (2.9 MV/cm). Specific on-resistance (R/sub on,sp/) was calculated to be as low as 74 m/spl Omega/.cm2 at 100/spl deg/C under the same gate bias.
Keywords :
electron mobility; power MOSFET; semiconductor device testing; silicon compounds; wide band gap semiconductors; 1 to 1.2 kV; 12 mum; 25 to 200 C; 26 V; 32 V; 4 mum; 4H-SiC power UMOSFET; Fluorinert; I-V characteristics; SiC; applied gate bias; blocking voltage; channel length; effective channel mobility; lightly doped n-type drift layer; specific on-resistance; transfer characteristics; Insulated gate bipolar transistors; MOSFET circuits; Oxidation; Power MOSFET; Schottky diodes; Silicon carbide; Temperature distribution; Testing; Thyristors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
