A physically based mobility model for numerical simulation of nonplanar devices

A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen´s rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5×10¹⁴ cm ^-3 and 10¹⁷ cm^-3 for the acceptor density of states and 6×10¹⁴ cm^-3 and 3×10¹⁷ cm^-3 for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points