A very thin power amplifier multichip module for 1.9-GHz cellular phone systems

Author

Kagaya, Osamu ; Sekine, Kenji ; Yamashita, Kiichi

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

22

Issue

1

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

40

Lastpage

45

Abstract

A compact thin power amplifier module for 1.9-GHz cellular phone systems has been incorporated using MCM-D technology and planarization technology of all passive components. The module consists of four Si-MOSFETs and is 9.4×7.2×1 mm, resulting in a volume of 0.07 cc including its shield metallic case. The module was designed with the computer simulator, Libra, and simplified lumped-element equivalent circuits of passive components. The fabricated module exhibited an output power of 33.3 dBm and power efficiency of 29%. These results suggest that these technologies will be very useful for the miniaturization of circuit components for GHz-band mobile communications

Keywords

MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; circuit simulation; equivalent circuits; multichip modules; 1.9 GHz; 29 percent; GHz-band mobile communications; Libra computer simulator; MCM-D technology; MOSFETs; Si; cellular phone systems; lumped-element equivalent circuits; output power; planarization technology; power amplifier multichip module; power efficiency; Cellular phones; Circuit simulation; Computational modeling; Computer simulation; Equivalent circuits; Mobile communication; Multichip modules; Planarization; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/6040.746541

Filename

746541