• DocumentCode
    1473660
  • Title

    Die Attach Materials for High Temperature Applications: A Review

  • Author

    Manikam, Vemal Raja ; Cheong, Kuan Yew

  • Author_Institution
    Sch. of Mater. & Miner. Resources Eng., Univ. Sains Malaysia, Nibong Tebal, Malaysia
  • Volume
    1
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    457
  • Lastpage
    478
  • Abstract
    The need for high power density and high temperature capabilities in today´s electronic devices continues to grow. More robust devices with reliable and stable functioning capabilities are needed, for example in aerospace and automotive industries as well as sensor technology. These devices need to perform under extreme temperature conditions, and not show any deterioration in terms of switching speeds, junction temperatures, and power density, and so on. While the bulk of research is performed to source and manufacture these high temperature devices, the device interconnect technology remains under high focus for packaging. The die attach material has to withstand high temperatures generated during device functioning and also cope with external conditions which will directly determine how well the device performs in the field. This literature work seeks to review the numerous research attempts thus far for high temperature die attach materials on wide band gap materials of silicon carbide, gallium nitride and diamond, document their successes, concerns and application possibilities, all of which are essential for high temperature reliability.
  • Keywords
    circuit reliability; diamond; electronics packaging; gallium compounds; high-temperature electronics; microassembling; silicon compounds; wide band gap semiconductors; C; GaN; SiC; device interconnect technology; diamond; electronic devices; electronics packaging; high temperature devices; high temperature die attach materials; high temperature reliability; junction temperatures; power density; sensor technology; Lead; Microassembly; Photonic band gap; Silicon; Silicon carbide; Temperature; Die attach; high temperature; power devices; wide band gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2010.2100432
  • Filename
    5732748