Title :
A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS
Author :
Yoo, Changsik ; Huang, Qiuting
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fDate :
5/1/2001 12:00:00 AM
Abstract :
A power amplifier for wireless applications has been implemented in a standard 0.25-μm CMOS technology. The power amplifier employs class-E topology to exploit its soft-switching property for high efficiency. The finite dc-feed inductance in the class-E load network allows the load resistance to be larger for the same output power and supply voltage than that for an RF choke. The common-gate switching scheme increases the maximum allowable supply voltage by almost twice from the value for a simple switching scheme. By employing these design techniques, the power amplifier can deliver 0.9-W output power to 50-Ω load at 900 MHz with 41% power-added efficiency (PAE) from a 1.8-V supply without stressing the active devices
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; 0.25 micron; 0.9 W; 1.8 V; 41 percent; 900 MHz; CMOS active device; DC-feed inductance; class-E power amplifier; common-gate switching; power-added efficiency; soft switching; wireless communication; CMOS technology; High power amplifiers; Inductance; Network topology; Power amplifiers; Power generation; Power supplies; Radio frequency; Radiofrequency amplifiers; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
