DocumentCode
1473869
Title
A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design
Author
Knoblinger, Gerhard ; Klein, Peter ; Tiebout, Marc
Author_Institution
Infineon Technol. AG, Munich, Germany
Volume
36
Issue
5
fYear
2001
fDate
5/1/2001 12:00:00 AM
Firstpage
831
Lastpage
837
Abstract
In this paper, we present a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a low noise amplifier in the gigahertz range
Keywords
MOSFET; SPICE; hot carriers; semiconductor device models; semiconductor device noise; thermal noise; BSIM3v3 SPICE simulation; RF-CMOS design; analytical model; deep-submicron MOSFET; hot carrier effects; low noise amplifier; thermal channel noise; Analytical models; CMOS technology; Circuit noise; Frequency; Hot carrier effects; Integrated circuit noise; MOSFETs; Noise measurement; Semiconductor device modeling; Semiconductor device noise;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.918922
Filename
918922
Link To Document