Title :
Epitaxially Regrown GaAs-Based Photonic Crystal Surface-Emitting Laser
Author :
Williams, David M. ; Groom, Kristian M. ; Stevens, Ben J. ; Childs, David T D ; Taylor, Richard J E ; Khamas, Salam ; Hogg, Richard A. ; Ikeda, Naoki ; Sugimoto, Yoshimasa
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fDate :
6/1/2012 12:00:00 AM
Abstract :
A GaAs-based epitaxially regrown photonic crystal surface-emitting laser is proposed and demonstrated at room temperature. The photonic crystal band-structure is mapped through the angular dependence of subthreshold electroluminescence, allowing the photonic crystal coupling coefficients to be determined.
Keywords :
III-V semiconductors; band structure; electroluminescence; epitaxial growth; gallium arsenide; photonic crystals; surface emitting lasers; GaAs; angular dependence; epitaxial regrowth; photonic crystal band structure; photonic crystal coupling coefficients; subthreshold electroluminescence; surface emitting laser; temperature 293 K to 298 K; Couplings; Distributed feedback devices; Epitaxial growth; Gallium arsenide; Laser feedback; Photonic crystals; Surface emitting lasers; GaAs; photonic crystals; regrowth; surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2191400
