DocumentCode
1474008
Title
Frequency-locked 1.3- and 1.5-μm semiconductor lasers for lightwave systems applications
Author
Chung, Y.C.
Author_Institution
AT&T Bell Lab., Holmdel, NJ, USA
Volume
8
Issue
6
fYear
1990
fDate
6/1/1990 12:00:00 AM
Firstpage
869
Lastpage
876
Abstract
A simple technique for frequency-locking 1.3- and 1.5-μm lasers to an excited-state atomic transition of noble gases using the optogalvanic effect is described. Many of the atomic transitions useful for these spectral regions are tabulated. The performance of frequency-locked lasers under direct frequency modulation is analyzed. It is shown that neither the frequency stability nor the receiver sensitivity shows any serious degradation when a frequency-locked laser is used in a frequency shift keying (FSK) transmission experiment
Keywords
frequency shift keying; laser frequency stability; optical modulation; semiconductor junction lasers; 1.3 micron; 1.5 micron; direct frequency modulation; excited-state atomic transition; frequency shift keying; frequency stability; frequency-locked lasers; frequency-locking; lightwave systems; noble gases; optogalvanic effect; receiver sensitivity; semiconductor lasers; Atom lasers; Atomic beams; Frequency modulation; Frequency shift keying; Gas lasers; Gases; Laser excitation; Laser stability; Laser transitions; Semiconductor lasers;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.54503
Filename
54503
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