Title :
Frequency-locked 1.3- and 1.5-μm semiconductor lasers for lightwave systems applications
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
A simple technique for frequency-locking 1.3- and 1.5-μm lasers to an excited-state atomic transition of noble gases using the optogalvanic effect is described. Many of the atomic transitions useful for these spectral regions are tabulated. The performance of frequency-locked lasers under direct frequency modulation is analyzed. It is shown that neither the frequency stability nor the receiver sensitivity shows any serious degradation when a frequency-locked laser is used in a frequency shift keying (FSK) transmission experiment
Keywords :
frequency shift keying; laser frequency stability; optical modulation; semiconductor junction lasers; 1.3 micron; 1.5 micron; direct frequency modulation; excited-state atomic transition; frequency shift keying; frequency stability; frequency-locked lasers; frequency-locking; lightwave systems; noble gases; optogalvanic effect; receiver sensitivity; semiconductor lasers; Atom lasers; Atomic beams; Frequency modulation; Frequency shift keying; Gas lasers; Gases; Laser excitation; Laser stability; Laser transitions; Semiconductor lasers;
Journal_Title :
Lightwave Technology, Journal of
