DocumentCode :
1474054
Title :
Study of Basic Effects of HPM Pulses in Digital CMOS Integrated Circuit Inputs
Author :
Holloway, Michael A. ; Dilli, Zeynep ; Seekhao, Nuttiiya ; Rodgers, John C.
Author_Institution :
Inst. for Res. in Electron. & Appl. Phys., Univ. of Maryland, College Park, MD, USA
Volume :
54
Issue :
5
fYear :
2012
Firstpage :
1017
Lastpage :
1027
Abstract :
The potential of high-power microwave radiation to couple into and generate malfunction in microelectronic systems has become a serious concern; however, the underlying electronic mechanisms are not well understood. We present results of experiments on the response of a typical CMOS integrated circuit to pulsed microwave excitation. Our results show that electrostatic discharge protection devices detect the pulse envelope of the microwave carrier via its nonlinear conductance. The device characteristics are analyzed using device physics to describe the quasi-static and non-quasi-static behavior of the protection circuits and define the regime of operation in terms of excitation frequency. The results of experiments and analysis lead to the development of an improved effects model based on Berkeley Short-channel IGFET Model using a body resistor network. Good agreement between experiments and transient and harmonic-balance simulations is demonstrated. The results show that a deterministic method of evaluating electromagnetic effects using physical, scalable device parameters is feasible.
Keywords :
CMOS digital integrated circuits; electrostatic discharge; insulated gate field effect transistors; microwave integrated circuits; Berkeley short-channel IGFET model; body resistor network; device characteristics; device physics; digital CMOS integrated circuit input; electromagnetic effect evaluation; electronic mechanism; electrostatic discharge protection device; excitation frequency; harmonic-balance simulation; high-power microwave pulse; high-power microwave radiation; microelectronic system; microwave carrier; nonlinear conductance; nonquasi-static behavior; physical parameter; protection circuit; pulse envelope detection; pulsed microwave excitation; scalable device parameter; transient simulation; CMOS integrated circuits; Electrostatic discharges; Integrated circuit modeling; Junctions; MOS devices; Radio frequency; Electromagnetic interference; electrostatic discharge (ESD) protection circuits; high-power microwave (HPM) effects;
fLanguage :
English
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9375
Type :
jour
DOI :
10.1109/TEMC.2012.2188720
Filename :
6172223
Link To Document :
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