A novel high performance SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)

Author

Takagi, T. ; Inoue, A. ; Hara, Y. ; Kanzawa, Y. ; Kubo, M.

Author_Institution

Lab. of Adv. Technol. Res., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

22

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

206

Lastpage

208

Abstract

In this letter, we propose a novel SiGe channel heterostructure dynamic threshold metal oxide semiconductor (DTMOS) and demonstrate its superiority over conventional Si-DTMOS. The introduction of a SiGe layer for the channel is very effective for reducing the threshold voltage in spite of keeping impurity doping level at the body region. Therefore, a low threshold voltage and a large body effect factor can be achieved simultaneously. The SiGe HDTMOS with highly doped body exhibits two times higher transconductance, 1.4 times higher saturation current, and better short channel immunity than that of the control Si-DTMOS with lightly doped body of which threshold voltage is nearly the same.

Keywords

Ge-Si alloys; MOSFET; doping profiles; semiconductor device reliability; semiconductor materials; HDTMOS; SiGe; body effect factor; heterostructure dynamic threshold pMOSFET; impurity doping level; saturation current; short channel immunity; threshold voltage; transconductance; Body regions; Germanium silicon alloys; Immune system; Lighting control; Semiconductor device doping; Semiconductor impurities; Silicon germanium; Threshold voltage; Transconductance; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.919230

Filename

919230