Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

Author

Banerjee, S. ; Chatty, K. ; Chow, T.P. ; Gutmann, R.J.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

22

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

209

Lastpage

211

Abstract

High-voltage lateral RESURF metal oxide semiconductor field effect transistors (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 900 V with a specific on-resistance of 0.5 /spl Omega/-cm/sup 2/. The RESURF dose in 4H-SiC to maximize the avalanche breakdown voltage is almost an order of magnitude higher than that of silicon; however this high RESURF dose leads to oxide breakdown and reliability concerns in thin (100-200 nm) gate oxide devices due to high electric field (>3-4 MV/cm) in the oxide. Lighter RESURF doses and/or thicker gate oxides are required in SiC lateral MOSFETs to achieve highest breakdown voltage capability.

Keywords

avalanche breakdown; power MOSFET; semiconductor device breakdown; semiconductor device reliability; semiconductor materials; silicon compounds; 100 to 200 nm; 4H-SiC; 900 V; HV lateral RESURF MOSFETs; RESURF dose; SiC; SiC lateral MOSFET; avalanche breakdown voltage; breakdown voltage capability; gate oxide thickness; high-voltage MOSFETs; oxide breakdown; reliability; Avalanche breakdown; Breakdown voltage; Conducting materials; FETs; Implants; Lead compounds; MOSFETs; Nitrogen; Silicon carbide; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.919231

Filename

919231