Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors

Author

Sandén, Martin ; Marinov, Ognian ; Deen, M. Jamal ; Östling, Mikael

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

22

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

242

Lastpage

244

Abstract

The variation of the low-frequency noise in polysilicon emitter bipolar junction transistors (BJTs) was investigated as a function of emitter area (A/sub E/). For individual BJTs with submicron-sized A/sub E/, the low-frequency noise strongly deviated from a 1/f-dependence. The averaged noise varied as 1/f, with a magnitude proportional to A/sub E//sup -1/, while the variation in the noise level was found to vary as A/sub E//sup -1.5/. A new expression that takes into account this deviation is proposed for SPICE modeling of the low-frequency noise. The traps responsible for the noise were located at the thin SiO/sub 2/ interface between the polysilicon and monosilicon emitter. The traps´ energy level, areal concentration and capture cross-section were estimated to 0.31 eV, 6/spl times/10/sup 8/ cm/sup -2/ and 2/spl times/10/sup -19/ cm/sup 2/, respectively.

Keywords

1/f noise; bipolar transistors; elemental semiconductors; interface states; semiconductor device measurement; semiconductor device models; semiconductor device noise; silicon; 1/f-dependence; LF noise variation; SPICE modeling; Si; Si-SiO/sub 2/; bipolar junction transistors; emitter area; interface traps; low-frequency noise; noise modeling; polysilicon emitter BJTs; thin SiO/sub 2/ interface; trap areal concentration; trap capture cross-section; trap energy level; Circuit noise; Fluctuations; Geometry; Low-frequency noise; MOSFETs; Marine technology; Noise generators; Noise level; SPICE; Semiconductor device noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.919242

Filename

919242