Title :
A time-dependent, surface potential based compact model for MOS capacitors
Author :
Victory, James ; McAndrew, Colin C. ; Gullapalli, Kiran
Author_Institution :
Motorola Inc., Le Grand Saconnex, Switzerland
fDate :
5/1/2001 12:00:00 AM
Abstract :
This paper presents a compact model for metal oxide semiconductor (MOS) capacitors, based on a time-dependent solution for the surface potential. This enables modeling of the frequency dependence of MOS capacitors, which is not possible with existing compact models. The model is implemented in Verilog-A, and is verified against two-dimensional (2-D) numerical device simulations with DESSIS.
Keywords :
MOS capacitors; electronic engineering computing; semiconductor device models; surface potential; varactors; 2D numerical device simulations; DESSIS; MOS capacitors; Verilog-A implementation; frequency dependence; surface potential based compact model; time-dependent compact model; Capacitance; Circuit optimization; Equations; Frequency dependence; MOS capacitors; MOSFET circuits; Silicon; Tuning; Varactors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
