Analysis of doped layer step waveguides using dark modes

Author

Chandler, Peter J. ; Lama, Francesco L. ; Townsend, Peter D. ; Zhang, Lin

Author_Institution

Sch. of Math. & Phys. Sci., Sussex Univ., Brighton, UK

Volume

8

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

917

Lastpage

921

Abstract

Results for the analysis of index profiles in steplike waveguide layers formed by proton exchange in LiNbO₃ and epitaxially grown Ge-doped quartz are presented. Modeling of the profile with real modes is difficult unless many modes propagate. However, an analysis which includes the substrate modes recorded in dark mode measurements greatly increases the data and hence the confidence in the model of the index profile. Analysis using a reflectivity function provides the required precision. The data demonstrate that the epitaxial GeO₂-doped layer has an index variation with depth

Keywords

germanium compounds; optical waveguide theory; refractive index; silicon compounds; Ge-doped quartz; LiNbO₃; SiO₂:Ge; SiO₂:GeO₂; dark mode measurements; dark modes; depth; doped layer step waveguides; epitaxially grown; index profiles; index variation; proton exchange; reflectivity function; steplike waveguide layers; substrate modes; Helium; Laser beams; Laser modes; Optical waveguides; Planar waveguides; Protons; Reflectivity; Semiconductor process modeling; Substrates; Waveguide lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.54510

Filename

54510