• DocumentCode
    1474412
  • Title

    CMOS differential-capacitance-to-frequency converter utilising repetitive charge integration and charge conservation

  • Author

    Lee, Hongseok ; Woo, J.-K. ; Kim, Sungho

  • Author_Institution
    Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
  • Volume
    46
  • Issue
    8
  • fYear
    2010
  • Firstpage
    567
  • Lastpage
    569
  • Abstract
    A low-complexity CMOS circuit is proposed for reading out monolithically integrated differential capacitive sensors. It directly converts the differential capacitance of a MEMS sensing device to a frequency by accumulating the charges produced by repeated charge integration and charge conservation. A prototype chip has been designed and fabricated in 0.35 m CMOS technology. Experimental results show that differential capacitance is linearly converted to output frequency.
  • Keywords
    CMOS integrated circuits; capacitive sensors; frequency convertors; micromechanical devices; monolithic integrated circuits; CMOS differential-capacitance-to-frequency converter; CMOS technology; MEMS sensing device; charge conservation; low-complexity CMOS circuit; monolithically integrated differential capacitive sensors; repetitive charge integration; size 0.35 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3416
  • Filename
    5451010