DocumentCode :
1474446
Title :
60-110 GHz low loss HDI transitions for LCP-packaged silicon substrate
Author :
Chung, D.J. ; Papapolymerou, John
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
46
Issue :
8
fYear :
2010
Firstpage :
577
Lastpage :
578
Abstract :
Wideband 3D transitions from 60 to 110 GHz using 50 m via technology on liquid crystal polymer (LCP) are presented. A conductor backed coplanar waveguide (CBCPW) transition on a homogeneous LCP sample shows less than 0.8 dB loss from 60 to 110 GHz. In addition, a CBCPW-to-CBCPW and a CBCPW-to-CPW transition on LCP bonded to silicon substrate are presented also in the range 60-110 GHz. The CBCPW-to-CBCPW transition shows less than 0.5 dB loss up to 100 GHz. The CBCPW-to-CPW transition yields less than 1 dB loss up to 110 GHz. These transitions are the first characterisation of vias in organic substrate packaged silicon in the 60-110 GHz frequency range.
Keywords :
coplanar waveguides; elemental semiconductors; integrated circuit interconnections; liquid crystal polymers; silicon; waveguide transitions; CBCPW transition; HDI transitions; LCP-packaged silicon substrate; conductor backed coplanar waveguide transition; frequency 60 GHz to 110 GHz; liquid crystal polymer; organic substrate packaged silicon; size 50 μm; wideband 3D transitions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.0241
Filename :
5451016
Link To Document :
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