Reduced light induced degradation of a-Si:H thin film transparent solar cells

We fabricated a-Si:H transparent solar cells with thin absorbers. The light induced degradation of 17 % to 22 % was obtained when 130, 150 and 200 nm thick absorbers were used in the fabrication of a-Si:H transparent solar cells. However, the cells with 108 and 120 nm thick absorber showed improved light induced degradation. In particular, the cell with 108 nm thick absorber showed highly improved degradation of 7.3 %. In this case, the p-layer thickness is crucial to determine the degradation rate.