• DocumentCode
    1474479
  • Title

    Two-port InGaAsP/InP square resonator microlasers

  • Author

    Che, K.-J. ; Lin, J.-D. ; Huang, Yong-Zhen ; Yang, Yue-De ; Du, Yun

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
  • Volume
    46
  • Issue
    8
  • fYear
    2010
  • Firstpage
    585
  • Lastpage
    586
  • Abstract
    Two-port InGaAsP/InP square resonator microlasers with a side length of 20 m have been fabricated by the planar technology process, which have two 1 m-wide output ports connected to the vertices of the square resonator. Continuous-wave electrically injected microsquare lasers have been realised at room temperature with mode Q-factors of 1.75 ?? 104 at the threshold current.
  • Keywords
    III-V semiconductors; indium compounds; microcavity lasers; InGaAsP-InP; continuous-wave electrically injected microsquare lasers; mode Q-factors; planar technology process; two-port square resonator microlasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.0588
  • Filename
    5451021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1474479