A theoretical appraisal of the quenched multiple domain mode in GaAs microwave diodes

Quenched multiple domain (q.m.d.) mode oscillations in bulk GaAs have been analysed to obtain the relationships between efficiency, fundamental-frequency power output, fundamental-frequency negative resistance, and d.c. bias voltage. It is found that this highly efficient mode does not have the limitations of transit-time devices and consequently has a frequency-independent power × impedance product. The results demonstrate that q.m.d. oscillators designed with multiple-tuned circuits can operate at twice the efficiency of those operated in single-tuned circuits.