DocumentCode
1474619
Title
Fabrication and characterization of Y-Ba-Cu-O and Nd-Ba-Cu-O ramp-edge junctions with an interface-modified barrier
Author
Makita, Takehiko ; Toma, Kazuyasu ; Ishikawa, Kazuhiro ; Zama, Hideaki ; Utagawa, Tadashi ; Kawabe, Ushio ; Tanabe, Keiichi
Author_Institution
Supercond. Res. Lab., ISTEC, Tokyo, Japan
Volume
11
Issue
1
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
155
Lastpage
158
Abstract
The fabrication process for YBa2Cu3O7-δ (YBCO) ramp-edge junctions with an interface-modified barrier has been studied. The conditions of electron cyclotron resonance (ECR) ion etching and following annealing treatment were optimized by evaluating the mean roughness of the ramp surface using atomic force microscope (AFM) observation. We could obtain resistively-shunted junction (RSJ) type current-voltage characteristics for the junctions with the counterelectrode YBCO layer deposited at temperatures lower than 720°C, while a deposition temperature higher than 755°C resulted in a high-Jc superconducting contact. The junctions exhibited an IcRn product of 1.0-1.9 mV and magnetic field modulation of Ic more than 90% at 4.2 K. By applying the optimum etching condition to a NdBa2Cu3O7-δ (NBCO) base electrode and employing a slightly higher annealing and deposition temperature, YBCO/NBCO ramp-edge Josephson junctions with a similar I cRn product were successfully obtained
Keywords
Josephson effect; annealing; barium compounds; critical current density (superconductivity); critical currents; high-temperature superconductors; neodymium compounds; sputter etching; superconducting junction devices; superconducting thin films; surface topography; yttrium compounds; 4.2 K; 720 to 775 C; AFM observation; IcRn product; Nd-Ba-Cu-O ramp-edge junctions; NdBa2Cu3O7-δ base electrode; NdBa2Cu3O7; Y-Ba-Cu-O ramp-edge junctions; YBa2Cu3O7-δ; YBa2Cu3O7; annealing treatment; counterelectrode YBCO layer; deposition temperature; electron cyclotron resonance ion etching; high-Jc superconducting contact; interface-modified barrier; magnetic field modulation; optimum etching condition; ramp surface roughness; resistively-shunted junction type current-voltage characteristics; Annealing; Atomic force microscopy; Cyclotrons; Electrons; Etching; Fabrication; Josephson junctions; Resonance; Temperature; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.919308
Filename
919308
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